ECH8690-TL-H دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت ECH8690-TL-H	دانلود دیتاشیت

ECH8690 8 pages

RoHS: true
Type: 1PCSN-Channel&1PCSP-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi ECH8690-TL-H
Power Dissipation (Pd): 1.5W
Total Gate Charge (Qg@Vgs): 18nC@10V
Input Capacitance (Ciss@Vds): 955pF@20V
Continuous Drain Current (Id): 4.7A;3.5A
Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@2A,10V
Package: ECH-8
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Base Part Number: ECH8690
detail: Mosfet Array N and P-Channel 60V 4.7A, 3.5A 1.5W Surface Mount 8-ECH