2SC6099-TL-E دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
2SC6099-TL-E
|
|
حجم فایل
|
57.16
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 2SC6099-TL-E
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
2A
-
Power Dissipation (Pd):
800mW
-
Transition Frequency (fT):
300MHz
-
DC Current Gain (hFE@Ic,Vce):
300@100mA,5V
-
Collector Cut-Off Current (Icbo):
1uA
-
Collector-Emitter Breakdown Voltage (Vceo):
100V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
110mV@1A,100mA
-
Package:
TP-FA
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Not For New Designs
-
Current - Collector (Ic) (Max):
2A
-
Voltage - Collector Emitter Breakdown (Max):
100V
-
Vce Saturation (Max) @ Ib, Ic:
165mV @ 100mA, 1A
-
Current - Collector Cutoff (Max):
1µA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 100mA, 5V
-
Power - Max:
800mW
-
Frequency - Transition:
300MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Supplier Device Package:
2-TP-FA
-
Base Part Number:
2SC6099
-
detail:
Bipolar (BJT) Transistor NPN 100V 2A 300MHz 800mW Surface Mount 2-TP-FA
