NTMD6P02R2G دیتاشیت

NTMD6P02R2G

مشخصات دیتاشیت

نام دیتاشیت NTMD6P02R2G
حجم فایل 90.087 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NTMD6P02R2G

دانلود دیتاشیت

سایر مستندات

NTMD6P02R2 7 pages

مشخصات فنی

  • RoHS: true
  • Type: 2 P-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTMD6P02R2G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2W
  • Total Gate Charge (Qg@Vgs): 35nC@4.5V
  • Drain Source Voltage (Vdss): 20V
  • Input Capacitance (Ciss@Vds): 1700pF@16V
  • Continuous Drain Current (Id): 4.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@4.5V,6.2A
  • Package: SOP-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
  • Power - Max: 750mW
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
  • Base Part Number: NTMD6P
  • detail: Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Surface Mount 8-SOIC

محصولات مشابه