NVLJD4007NZTAG دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NVLJD4007NZTAG-Isee	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVLJD4007NZTAG
Power Dissipation (Pd): 755mW
Drain Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 245mA
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@100uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 7Ω@4.5V,125mA
Package: DFN2020-6B
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 755mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Base Part Number: NVLJD4
detail: Mosfet Array 2 N-Channel (Dual) 30V 245mA 755mW Surface Mount 6-WDFN (2x2)