دیتاشیت FQD3N60CTM-WS
مشخصات دیتاشیت
نام دیتاشیت |
FQD3N60CTM_WS
|
حجم فایل |
977.842
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
QFET®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
600V
-
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
3.4Ohm @ 1.2A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
565pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
50W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D-Pak
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
FQD3
-
detail:
N-Channel 600V 2.4A (Tc) 50W (Tc) Surface Mount D-Pak