FGD3N60UNDF دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FGD3N60UNDF
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حجم فایل
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70.016
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Type:
NPT
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGD3N60UNDF
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Operating Temperature:
55°C~+150°C@(Tj)
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Collector Current (Ic):
6A
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Power Dissipation (Pd):
60W
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Turn?on Delay Time (Td(on)):
5.5ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.052mJ
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Total Gate Charge (Qg@Ic,Vge):
1.6nC
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Turn?off Delay Time (Td(off)):
22ns
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Pulsed Collector Current (Icm):
9A
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Turn?off Switching Loss (Eoff):
0.03mJ
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Diode Reverse Recovery Time (Trr):
21ns
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Collector-Emitter Breakdown Voltage (Vces):
600V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.52V@15V,3A
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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IGBT Type:
NPT
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
6A
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Current - Collector Pulsed (Icm):
9A
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Vce(on) (Max) @ Vge, Ic:
2.52V @ 15V, 3A
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Power - Max:
60W
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Switching Energy:
52µJ (on), 30µJ (off)
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Input Type:
Standard
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Gate Charge:
1.6nC
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Td (on/off) @ 25°C:
5.5ns/22ns
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Test Condition:
400V, 3A, 10Ohm, 15V
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Reverse Recovery Time (trr):
21ns
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
TO-252, (D-Pak)
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Base Part Number:
FGD3
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detail:
IGBT NPT 600V 6A 60W Surface Mount TO-252, (D-Pak)
