دیتاشیت NJVNJD2873T4G-VF01

NJD2873

مشخصات دیتاشیت

نام دیتاشیت NJD2873
حجم فایل 68.157 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت NJD2873

NJD2873 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NJVNJD2873T4G-VF01
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+175°C@(Tj)
  • Collector Current (Ic): 2A
  • Power Dissipation (Pd): 1.68W
  • Transition Frequency (fT): 65MHz
  • DC Current Gain (hFE@Ic,Vce): 120@500mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,1A
  • Package: DPAK-3
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1.68W
  • Frequency - Transition: 65MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NJVNJD287
  • detail: Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.68W Surface Mount DPAK