FDD6670A دیتاشیت

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مشاهده دیتاشیت FDD6670A	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDD6670A
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.2W;63W
Total Gate Charge (Qg@Vgs): 22nC@5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 1755pF@15V
Continuous Drain Current (Id): 15A;66A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,15A
Package: TO-252
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 15V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: FDD667
detail: N-Channel 30V 15A (Ta), 66A (Tc) 3.2W (Ta), 63W (Tc) Surface Mount D-PAK (TO-252)