KSA1142OSTU دیتاشیت

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مشاهده دیتاشیت KSA1142OSTU	دانلود دیتاشیت

KSA1142 6 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi KSA1142OSTU
Transistor Type: PNP
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 8W
Transition Frequency (fT): 180MHz
DC Current Gain (hFE@Ic,Vce): 200@1A,5V
Collector Cut-Off Current (Icbo): 1uA
Collector-Emitter Breakdown Voltage (Vceo): 180V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 160mV@50mA,5mA
Package: TO-126
Manufacturer: onsemi
Series: -
Packaging: Tube
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Power - Max: 1.2W
Frequency - Transition: 180MHz
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: KSA11
detail: Bipolar (BJT) Transistor PNP 180V 100mA 180MHz 1.2W Through Hole TO-126-3