FDMS3500 دیتاشیت

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مشاهده دیتاشیت FDMS3500	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMS3500
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.5W;96W
Total Gate Charge (Qg@Vgs): 91nC@10V
Drain Source Voltage (Vdss): 75V
Input Capacitance (Ciss@Vds): 4765pF@40V
Continuous Drain Current (Id): 9.2A;49A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 14.5mΩ@11.5A,10V
Package: PQFN-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: Power Clip 56
Package / Case: 8-PowerTDFN
Base Part Number: FDMS35
detail: N-Channel 75V 9.2A (Ta), 49A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount Power Clip 56