دیتاشیت NTD4808N-1G

مشخصات دیتاشیت

دانلود دیتاشیت NTD4808N, NVD4808N	NTD4808N, NVD4808N Datasheet

Manufacturer: ON Semiconductor
Series: -
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1538pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: NTD48
detail: N-Channel 30V 10A (Ta), 63A (Tc) 1.4W (Ta), 54.6W (Tc) Through Hole I-PAK