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RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFS4897NFT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 96.2W
Total Gate Charge (Qg@Vgs): 40.2nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 5.66nF@15V
Continuous Drain Current (Id): 171A
Gate Threshold Voltage (Vgs(th)@Id): 2V@1mA
Reverse Transfer Capacitance (Crss@Vds): 495pF@15V
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3mΩ@10V,22A
Package: SO-8FL
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
FET Feature: -
Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NTMFS4
detail: N-Channel 30V 17A (Ta), 171A (Tc) 950mW (Ta), 96.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)