FCD9N60NTM دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FCD9N60NTM
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حجم فایل
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1272.98
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Package:
TO-252
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Manufacturer:
ISC
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Series:
SupreMOS™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
385mOhm @ 4.5A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
17.8nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
92.6W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D-Pak
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
FCD9
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detail:
N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount D-Pak
