دیتاشیت BD435G
مشخصات دیتاشیت
| نام دیتاشیت | BD435,437,439,441 |
|---|---|
| حجم فایل | 80.512 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 4 |
دانلود دیتاشیت BD435,437,439,441 |
BD435,437,439,441 Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi BD435G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 4A
- Power Dissipation (Pd): 36W
- Transition Frequency (fT): 3MHz
- DC Current Gain (hFE@Ic,Vce): 85@500mA,1V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@2A,200mA
- Package: TO-225
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 36W
- Frequency - Transition: 3MHz
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
- Base Part Number: BD435
- detail: Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-225AA
