FDM3622 دیتاشیت

FDM3622

مشخصات دیتاشیت

نام دیتاشیت FDM3622
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت FDM3622

دانلود دیتاشیت

سایر مستندات

FDM3622 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDM3622
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.1W
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 1090pF@25V
  • Continuous Drain Current (Id): 4.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@4.4A,10V
  • Package: WDFN-8
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
  • Base Part Number: FDM362
  • detail: N-Channel 100V 4.4A (Ta) 2.1W (Ta) Surface Mount 8-MLP (3.3x3.3)

محصولات مشابه