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- دیتاشیت FQA13N80-F109
FQA13N80-F109 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FQA13N80-F109 |
|---|---|
| حجم فایل | 78.838 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت FQA13N80-F109 |
دانلود دیتاشیت |
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سایر مستندات
FQA13N80-F109 8 pages
FQA13N80-F109 8 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQA13N80-F109
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 300W
- Total Gate Charge (Qg@Vgs): 88nC@10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 3500pF@25V
- Continuous Drain Current (Id): 12.6A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 750mΩ@10V,6.3A
- Package: TO-3P
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: FQA1
- detail: N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN