دیتاشیت FQA55N25
مشخصات دیتاشیت
| نام دیتاشیت |
FQA55N25
|
| حجم فایل |
2415.534
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
QFET®
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
250V
-
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
40mOhm @ 27.5A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
180nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
6250pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
310W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-3PN
-
Package / Case:
TO-3P-3, SC-65-3
-
Base Part Number:
FQA5
-
detail:
N-Channel 250V 55A (Tc) 310W (Tc) Through Hole TO-3PN
