دیتاشیت HGTG30N60B3D
مشخصات دیتاشیت
| نام دیتاشیت |
HGTG30N60B3D
|
| حجم فایل |
66.55
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi HGTG30N60B3D
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Not For New Designs
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
60A
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Current - Collector Pulsed (Icm):
220A
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Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 30A
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Power - Max:
208W
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Switching Energy:
550µJ (on), 680µJ (off)
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Input Type:
Standard
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Gate Charge:
170nC
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Td (on/off) @ 25°C:
36ns/137ns
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Test Condition:
480V, 30A, 3Ohm, 15V
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Reverse Recovery Time (trr):
55ns
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247-3
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Base Part Number:
HGTG30N60
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detail:
IGBT 600V 60A 208W Through Hole TO-247-3
