HUF75652G3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HUF75652G3
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حجم فایل
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51.519
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi HUF75652G3
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
515W
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Total Gate Charge (Qg@Vgs):
475nC@20V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
7585pF@25V
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Continuous Drain Current (Id):
75A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
8mΩ@75A,10V
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Package:
TO-247-3
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Manufacturer:
onsemi
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Series:
UltraFET™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
8mOhm @ 75A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
475nC @ 20V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
7585pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
515W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247-3
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Package / Case:
TO-247-3
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Base Part Number:
HUF75
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detail:
N-Channel 100V 75A (Tc) 515W (Tc) Through Hole TO-247-3
