HUF75545S3ST دیتاشیت

HUF75545S3ST

مشخصات دیتاشیت

نام دیتاشیت HUF75545S3ST
حجم فایل 50.018 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

دانلود دیتاشیت HUF75545S3ST

دانلود دیتاشیت

سایر مستندات

HUF75545P3, HUF75545S3S 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi HUF75545S3ST
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 270W
  • Total Gate Charge (Qg@Vgs): 235nC@20V
  • Drain Source Voltage (Vdss): 80V
  • Input Capacitance (Ciss@Vds): 3750pF@25V
  • Continuous Drain Current (Id): 75A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@75A,10V
  • Package: TO-263AB
  • Manufacturer: onsemi
  • Series: UltraFET™
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Base Part Number: HUF75
  • detail: N-Channel 80V 75A (Tc) 270W (Tc) Through Hole I2PAK (TO-262)

محصولات مشابه