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- دیتاشیت FDP027N08B-F102
دیتاشیت FDP027N08B-F102
مشخصات دیتاشیت
نام دیتاشیت | FDP027N08B_F102 |
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حجم فایل | 891.793 کیلوبایت |
نوع فایل | |
تعداد صفحات | 9 |
دانلود دیتاشیت FDP027N08B_F102 |
FDP027N08B_F102 Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDP027N08B-F102
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 246W
- Total Gate Charge (Qg@Vgs): 178nC@10V
- Drain Source Voltage (Vdss): 80V
- Input Capacitance (Ciss@Vds): 13530pF@40V
- Continuous Drain Current (Id): 223A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7mΩ@10V,100A
- Package: TO-220
- Manufacturer: onsemi
- Series: PowerTrench®
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V
- FET Feature: -
- Power Dissipation (Max): 246W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FDP027
- detail: N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3