دیتاشیت FQA9N90C-F109

FQA9N90C_F109

مشخصات دیتاشیت

نام دیتاشیت FQA9N90C_F109
حجم فایل 1849.783 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت FQA9N90C_F109

FQA9N90C_F109 Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQA9N90C-F109
  • Power Dissipation (Pd): 280W
  • Drain Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 9A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,4.5A
  • Package: TO-3P-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
  • Base Part Number: FQA9
  • detail: N-Channel 900V 9A (Tc) 280W (Tc) Through Hole TO-3P