دیتاشیت FDA20N50-F109
مشخصات دیتاشیت
| نام دیتاشیت |
FDA20N50-F109
|
| حجم فایل |
1729.118
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
280W
-
Total Gate Charge (Qg@Vgs):
59.5nC@10V
-
Drain Source Voltage (Vdss):
500V
-
Input Capacitance (Ciss@Vds):
3120pF@25V
-
Continuous Drain Current (Id):
22A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
230mΩ@11A,10V
-
Package:
TO-3PN-3
-
Manufacturer:
onsemi
-
Series:
UniFET™
-
Packaging:
Tube
-
Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
230mOhm @ 11A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
59.5nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
3120pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
280W (Tc)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-3PN
-
Package / Case:
TO-3P-3, SC-65-3
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Base Part Number:
FDA20
-
detail:
N-Channel 500V 22A (Tc) 280W (Tc) Through Hole TO-3PN
