NGTB15N120IHRWG دیتاشیت

NGTB15N120IHRWG

مشخصات دیتاشیت

نام دیتاشیت NGTB15N120IHRWG
حجم فایل 85.759 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت NGTB15N120IHRWG-Isee

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سایر مستندات

NGTB15N120IHRWG 10 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTB15N120IHRWG
  • Operating Temperature: -40°C~+175°C@(Tj)
  • Collector Current (Ic): 30A
  • Power Dissipation (Pd): 333W
  • Turn?on Delay Time (Td(on)): -
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): -
  • Total Gate Charge (Qg@Ic,Vge): 160nC
  • Turn?off Delay Time (Td(off)): 170ns
  • Pulsed Collector Current (Icm): 60A
  • Turn?off Switching Loss (Eoff): 0.34mJ
  • Collector-Emitter Breakdown Voltage (Vces): 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,15A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 333W
  • Switching Energy: 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: -/170ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Base Part Number: NGTB15
  • detail: IGBT Trench Field Stop 1200V 30A 333W Through Hole TO-247

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