MVMBF0201NLT1G دیتاشیت

MVMBF0201NLT1G

مشخصات دیتاشیت

نام دیتاشیت MVMBF0201NLT1G
حجم فایل 85.608 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت MVMBF0201NLT1G

دانلود دیتاشیت

سایر مستندات

MMBF,MVMBF0201NLT1 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi MVMBF0201NLT1G
  • Power Dissipation (Pd): 225mW
  • Input Capacitance (Ciss@Vds): 45pF@5V
  • Continuous Drain Current (Id): 300mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@300mA,10V
  • Package: SOT-23-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: MVMBF
  • detail: N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3

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