FDZ193P دیتاشیت

FDZ193P

مشخصات دیتاشیت

نام دیتاشیت FDZ193P
حجم فایل 67.772 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت FDZ193P

دانلود دیتاشیت

سایر مستندات

FDZ193P 9 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDZ193P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.9W
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Drain Source Voltage (Vdss): 20V
  • Input Capacitance (Ciss@Vds): 660pF@10V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@4.5V,1A
  • Package: WLCSP-6
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WLCSP (1.0x1.5)
  • Package / Case: 6-UFBGA, WLCSP
  • Base Part Number: FDZ19
  • detail: P-Channel 20V 3A (Ta) 1.9W (Ta) Surface Mount 6-WLCSP (1.0x1.5)

محصولات مشابه