NST489AMT1 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NST489AMT1	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSVT489AMT1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 2A
Power Dissipation (Pd): 535mW
Transition Frequency (fT): 300MHz
DC Current Gain (hFE@Ic,Vce): 300@500mA,5V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 30V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@100mA,1A
Package: SOT-23-6
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Power - Max: 535mW
Frequency - Transition: 300MHz
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: NSVT48
detail: Bipolar (BJT) Transistor NPN 30V 2A 300MHz 535mW Surface Mount 6-TSOP