FGA30N60LSDTU دیتاشیت

FGA30N60LSDTU

مشخصات دیتاشیت

نام دیتاشیت FGA30N60LSDTU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FGA30N60LSDTU

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مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGA30N60LSDTU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 60A
  • Power Dissipation (Pd): 480W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 1.1mJ
  • Pulsed Collector Current (Icm): 90A
  • Turn?off Switching Loss (Eoff): 21mJ
  • Diode Reverse Recovery Time (Trr): 35ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: TO-3P
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
  • Power - Max: 480W
  • Switching Energy: 1.1mJ (on), 21mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 18ns/250ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
  • Base Part Number: FGA30
  • detail: IGBT Trench Field Stop 600V 60A 480W Through Hole TO-3P

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