FJX992TF دیتاشیت

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مشاهده دیتاشیت FJX992TF	دانلود دیتاشیت

FJX992 8 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi FJX992TF
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 235mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 200@2mA,6V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 120V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,1mA
Package: SOT-323-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 235mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70 (SOT323)
Base Part Number: FJX992
detail: Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 235mW Surface Mount SC-70 (SOT323)