FDP55N06, FDPF55N06 دیتاشیت

FDP55N06, FDPF55N06

مشخصات دیتاشیت

نام دیتاشیت FDP55N06, FDPF55N06
حجم فایل 1560.409 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FDP55N06, FDPF55N06

دانلود دیتاشیت

سایر مستندات

FDPF55N06 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDPF55N06
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 48W
  • Total Gate Charge (Qg@Vgs): 37nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 1510pF@25V
  • Continuous Drain Current (Id): 55A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,27.5A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: UniFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FDPF5
  • detail: N-Channel 60V 55A (Tc) 48W (Tc) Through Hole TO-220F

محصولات مشابه