NTD4809NT4G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NTD4809NT4G
|
|
حجم فایل
|
94.558
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NTD4809NT4G
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
1.4W
-
Total Gate Charge (Qg@Vgs):
25nC@11.5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
1456pF@12V
-
Continuous Drain Current (Id):
9.6A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
9mΩ@10V,30A
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
9.6A (Ta), 58A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
-
Rds On (Max) @ Id, Vgs:
9mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 11.5V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1456pF @ 12V
-
FET Feature:
-
-
Power Dissipation (Max):
1.4W (Ta), 52W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
DPAK
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
NTD48
-
detail:
N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK
