NSS40501UW3T2G دیتاشیت

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مشاهده دیتاشیت NSS40501UW3T2G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSS40501UW3T2G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 5A
Power Dissipation (Pd): 1.5W
Transition Frequency (fT): 150MHz
DC Current Gain (hFE@Ic,Vce): 200@2A,2V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 40V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 110mV@4A,400mA
Package: DFN-3(2x2)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 875mW
Frequency - Transition: 150MHz
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Supplier Device Package: 3-WDFN (2x2)
Base Part Number: NSS405
detail: Bipolar (BJT) Transistor NPN 40V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2)