FQP9N90C دیتاشیت

FQP9N90C

مشخصات دیتاشیت

نام دیتاشیت FQP9N90C
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت FQP9N90C

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

FQP9N90C, FQPF9N90C 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQP9N90C
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 205W
  • Total Gate Charge (Qg@Vgs): 58nC@10V
  • Drain Source Voltage (Vdss): 900V
  • Input Capacitance (Ciss@Vds): 2730pF@25V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,4A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP9
  • detail: N-Channel 900V 8A (Tc) 205W (Tc) Through Hole TO-220-3

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