BC849BLT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BC849BLT1G
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حجم فایل
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80.323
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BC849BLT1G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
300mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
200@2mA,5V
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Collector Cut-Off Current (Icbo):
15nA
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Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@100mA,5mA
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
30V
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Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
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Current - Collector Cutoff (Max):
15nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
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Power - Max:
300mW
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Frequency - Transition:
100MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SOT-23-3 (TO-236)
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Base Part Number:
BC849
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detail:
Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
