دیتاشیت BD434S
مشخصات دیتاشیت
| نام دیتاشیت |
BD433-38
|
| حجم فایل |
50.695
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BD434S
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
36W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
40@10mA,5V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
22V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@2A,200mA
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Package:
TO-126-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
4A
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Voltage - Collector Emitter Breakdown (Max):
22V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
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Current - Collector Cutoff (Max):
100µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 5V
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Power - Max:
36W
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Frequency - Transition:
3MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
SOT-32-3
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Base Part Number:
BD434
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detail:
Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole SOT-32-3
