NVMFD5853NT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NVMFD5853NT1G
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حجم فایل
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102.117
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVMFD5853NT1G
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
58W
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Total Gate Charge (Qg@Vgs):
24nC@10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
1.225nF@25V
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Continuous Drain Current (Id):
53A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
100pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
8.4mΩ@10V,15A
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Package:
DFN-8(5x6)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Not For New Designs
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
12A
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Rds On (Max) @ Id, Vgs:
10mOhm @ 15A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
1225pF @ 25V
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Power - Max:
3.1W
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Mounting Type:
Surface Mount
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Package / Case:
8-PowerTDFN
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Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Base Part Number:
NVMFD5
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detail:
Mosfet Array 2 N-Channel (Dual) 40V 12A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
