2SB1203/2SD1803 دیتاشیت

2SB1203/2SD1803

مشخصات دیتاشیت

نام دیتاشیت 2SB1203/2SD1803
حجم فایل 392.926 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت 2SB1203/2SD1803

دانلود دیتاشیت

سایر مستندات

2SD1803S-E 9 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi 2SD1803T-E
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 20W
  • Transition Frequency (fT): 180MHz
  • DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 220mV@3A,150mA
  • Package: TO-251
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 180MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
  • Base Part Number: 2SD1803
  • detail: Bipolar (BJT) Transistor NPN 50V 5A 180MHz 1W Through Hole TP

محصولات مشابه