دیتاشیت 2SA2169-E

2SA2169/2SC6017

مشخصات دیتاشیت

نام دیتاشیت 2SA2169/2SC6017
حجم فایل 430.906 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت 2SA2169/2SC6017

2SA2169/2SC6017 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi 2SA2169-E
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 20W
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE@Ic,Vce): 200@1A,2V
  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 180mV@5A,250mA
  • Package: TO-251-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Bulk
  • Part Status: Not For New Designs
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 950mW
  • Frequency - Transition: 130MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
  • Base Part Number: 2SA2169
  • detail: Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP

دیتاشیت محصولات مشابه