FDMS007N08LC دیتاشیت

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مشاهده دیتاشیت FDMS007N08LC	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMS007N08LC
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.5W;92.6W
Total Gate Charge (Qg@Vgs): 33nC@0~10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 2.227nF@40V
Continuous Drain Current (Id): 14A;84A
Gate Threshold Voltage (Vgs(th)@Id): 1.4V@120uA
Reverse Transfer Capacitance (Crss@Vds): 27pF@40V
Drain Source On Resistance (RDS(on)@Vgs,Id): 4.9mΩ@10V,21A
Package: PQFN-8(5x6)
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 92.6W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN
Base Part Number: FDMS00
detail: N-Channel 80V 14A (Ta), 84A (Tc) 2.5W (Ta), 92.6W (Tc) Surface Mount 8-PQFN (5x6)