دیتاشیت FQU4N50TU-WS

FQU4N50TU_WS

مشخصات دیتاشیت

نام دیتاشیت FQU4N50TU_WS
حجم فایل 1072.072 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FQU4N50TU_WS

FQU4N50TU_WS Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU4
  • detail: N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK

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