FQD9N25, FQU9N25 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FQD9N25, FQU9N25
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حجم فایل
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927.709
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
250V
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Current - Continuous Drain (Id) @ 25°C:
7.4A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
420mOhm @ 3.7A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
2.5W (Ta), 55W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Base Part Number:
FQU9
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detail:
N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
