FFSB1065B دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FFSB1065B	دانلود دیتاشیت

RoHS: true
Category: Diodes/Schottky Barrier Diodes (SBD)
Datasheet: onsemi FFSB1065B
Diode Configuration: Single
Reverse Voltage (Vr): 650V
Forward Voltage (Vf@If): 1.38V@10A
Reverse Leakage Current (Ir): 0.5uA@650V
Average Rectified Current (Io): 27A
Package: TO-263
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 27A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK-2 (TO-263-2)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: FFSB10
detail: Diode Silicon Carbide Schottky 650V 27A (DC) Surface Mount D²PAK-2 (TO-263-2)