NVBLS001N06C دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NVBLS001N06C
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حجم فایل
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90.074
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVBLS001N06C
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
284W
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Total Gate Charge (Qg@Vgs):
143nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
11.575nF@30V
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Continuous Drain Current (Id):
422A
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Gate Threshold Voltage (Vgs(th)@Id):
2.8V@562uA
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Reverse Transfer Capacitance (Crss@Vds):
76pF@30V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
0.75mΩ@10V,80A
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Package:
H-PSOF-8L
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
51A (Ta), 422A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
900µOhm @ 80A, 10V
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Vgs(th) (Max) @ Id:
4V @ 562µA
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Gate Charge (Qg) (Max) @ Vgs:
143nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
11575pF @ 30V
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FET Feature:
-
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Power Dissipation (Max):
4.2W (Ta), 284W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-HPSOF
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Package / Case:
8-PowerSFN
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Base Part Number:
NVBLS0
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detail:
N-Channel 60V 51A (Ta), 422A (Tc) 4.2W (Ta), 284W (Tc) Surface Mount 8-HPSOF
