NTBLS0D7N06C دیتاشیت

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مشاهده دیتاشیت NTBLS0D7N06C	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTBLS0D7N06C
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 314W
Total Gate Charge (Qg@Vgs): 170nC@10V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 13.73nF@30V
Continuous Drain Current (Id): 470A
Gate Threshold Voltage (Vgs(th)@Id): 2.8V@661uA
Reverse Transfer Capacitance (Crss@Vds): 92pF@30V
Drain Source On Resistance (RDS(on)@Vgs,Id): 0.56mΩ@10V,80A
Package: H-PSOF-8L
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 750µOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 661µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13730pF @ 30V
FET Feature: -
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-HPSOF
Package / Case: 8-PowerSFN
Base Part Number: NTBLS0
detail: N-Channel 60V 54A (Ta), 470A (Tc) 4.2W (Ta), 314W (Tc) Surface Mount 8-HPSOF