NTHL190N65S3HF دیتاشیت

NTHL190N65S3HF

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نام دیتاشیت NTHL190N65S3HF
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مشاهده دیتاشیت NTHL190N65S3HF

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTHL190N65S3HF
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 162W
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1610pF@400V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@430uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 165mΩ@10V,10A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: FRFET®, SuperFET® III
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 162W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: NTHL19
  • detail: N-Channel 650V 20A (Tc) 162W (Tc) Through Hole TO-247-3

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