NTBGS4D1N15MC دیتاشیت

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مشاهده دیتاشیت NTBGS4D1N15MC	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTBGS4D1N15MC
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.7W;316W
Total Gate Charge (Qg@Vgs): 88.9nC@10V
Drain Source Voltage (Vdss): 150V
Input Capacitance (Ciss@Vds): 7285pF@75V
Continuous Drain Current (Id): 20A;185A
Gate Threshold Voltage (Vgs(th)@Id): 4.5V@574uA
Reverse Transfer Capacitance (Crss@Vds): 10.6pF@75V
Drain Source On Resistance (RDS(on)@Vgs,Id): 3.3mΩ@10V,104A
Package: D2PAK-7
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 574µA
Gate Charge (Qg) (Max) @ Vgs: 88.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7.285pF @ 75V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 316W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
detail: N-Channel 150V 20A (Ta), 185A (Tc) 3.7W (Ta), 316W (Tc) Surface Mount D²PAK (TO-263)