NTLJS7D2P02P8ZTAG دیتاشیت

NTLJS7D2P02P8ZTAG

مشخصات دیتاشیت

نام دیتاشیت NTLJS7D2P02P8ZTAG
حجم فایل 89.106 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTLJS7D2P02P8ZTAG

دانلود دیتاشیت

سایر مستندات

NTLJS7D2P02P8Z 5 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTLJS7D2P02P8ZTAG
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 860mW
  • Total Gate Charge (Qg@Vgs): 26.7nC@4.5V
  • Input Capacitance (Ciss@Vds): 2790pF@10V
  • Continuous Drain Current (Id): 7.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10A,4.5V
  • Package: PQFN-6(2x2)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerWDFN
  • Base Part Number: NTLJS7D
  • detail: P-Channel 20V 7.9A (Ta) 860mW (Ta) Surface Mount 6-PQFN (2x2)

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