NVD5C688NLT4G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NVD5C688NLT4G
|
|
حجم فایل
|
89.752
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NVD5C688NLT4G
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
18W
-
Total Gate Charge (Qg@Vgs):
3.4nC@4.5V
-
Input Capacitance (Ciss@Vds):
400pF@25V
-
Continuous Drain Current (Id):
17A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.1V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
27.4mΩ@10A,10V
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
Automotive, AEC-Q101
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
27.4mOhm @ 10A, 10V
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
3.4nC @ 4.5V
-
Vgs (Max):
±16V
-
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
18W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
DPAK
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
NVD5C6
-
detail:
N-Channel 60V 17A (Tc) 18W (Tc) Surface Mount DPAK
