VP2206N2 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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VP2206N2
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حجم فایل
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109.342
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech VP2206N2
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
360mW
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Input Capacitance (Ciss@Vds):
450pF@25V
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Continuous Drain Current (Id):
750mA
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Gate Threshold Voltage (Vgs(th)@Id):
3.5V@10mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
900mΩ@3.5A,10V
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Package:
TO-39
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Bulk
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
750mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
900mOhm @ 3.5A, 10V
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Vgs(th) (Max) @ Id:
3.5V @ 10mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
450pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
360mW (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-39
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Package / Case:
TO-205AD, TO-39-3 Metal Can
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detail:
P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole TO-39
