MCH6541-TL-E دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MCH6541-TL-E	دانلود دیتاشیت

MCH6541 8 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MCH6541-TL-E
Transistor Type: 1PCSNPN&1PCSPNP
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 700mA
Power Dissipation (Pd): 550mW
Transition Frequency (fT): 540MHz;520MHz
DC Current Gain (hFE@Ic,Vce): 300@50mA,2V;200@10mA,2V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 30V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 85mV@200mA,10mA;110mV@200mA,10mA
Package: MCPH-6
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA / 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V / 200 @ 10mA, 2V
Power - Max: 550mW
Frequency - Transition: 540MHZ, 520MHz
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH
Base Part Number: MCH65
detail: Bipolar (BJT) Transistor Array NPN, PNP 30V 700mA 540MHZ, 520MHz 550mW Surface Mount 6-MCPH